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Freescale Semiconductor Technical Data
Document Number: MRF8S7170N Rev. 0, 2/2010
RF Power Field Effect Transistor
N-Channel Enhancement-Mode Lateral MOSFET
Designed for base station applications with frequencies from 728 to 768 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats. * Typical Single-Carrier W-CDMA Performance: VDD = 28 Volts, IDQ = 1200 mA, Pout = 50 Watts Avg., IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF.
Frequency 728 MHz 748 MHz 768 MHz Gps (dB) 19.7 19.5 19.4 hD (%) 37.1 37.0 37.9 Output PAR (dB) 6.2 6.1 6.1 ACPR (dBc) -38.7 -37.5 -37.8
MRF8S7170NR3
728-768 MHz, 50 W AVG., 28 V SINGLE W-CDMA LATERAL N-CHANNEL RF POWER MOSFET
* Capable of Handling 10:1 VSWR, @ 32 Vdc, 748 MHz, 170 Watts CW Output Power (3 dB Input Overdrive from Rated Pout), Designed for Enhanced Ruggedness * Typical Pout @ 1 dB Compression Point ] 182 Watts CW Features * 100% PAR Tested for Guaranteed Output Power Capability * Characterized with Series Equivalent Large-Signal Impedance Parameters and Common Source S-Parameters * Internally Matched for Ease of Use * Integrated ESD Protection * Greater Negative Gate-Source Voltage Range for Improved Class C Operation * Designed for Digital Predistortion Error Correction Systems * 225C Capable Plastic Package * RoHS Compliant * In Tape and Reel. R3 Suffix = 250 Units per 32 mm, 13 inch Reel. Table 1. Maximum Ratings
Rating Drain-Source Voltage Gate-Source Voltage Operating Voltage Storage Temperature Range Case Operating Temperature Operating Junction Temperature
(1,2)
CASE 2021-03, STYLE 1 OM-780-2 PLASTIC
Symbol VDSS VGS VDD Tstg TC TJ
Value -0.5, +70 -6.0, +10 32, +0 -65 to +150 150 225
Unit Vdc Vdc Vdc C C C
Table 2. Thermal Characteristics
Characteristic Thermal Resistance, Junction to Case Case Temperature 80C, 170 W CW, 28 Vdc, IDQ = 1200 mA Case Temperature 81C, 50 W CW, 28 Vdc, IDQ = 1200 mA Symbol RJC 0.30 0.37 Value (2,3) Unit C/W
1. Continuous use at maximum temperature will affect MTTF. 2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. 3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955.
(c) Freescale Semiconductor, Inc., 2010. All rights reserved.
MRF8S7170NR3 1
RF Device Data Freescale Semiconductor
Table 3. ESD Protection Characteristics
Test Methodology Human Body Model (per JESD22-A114) Machine Model (per EIA/JESD22-A115) Charge Device Model (per JESD22-C101) Class 1C (Minimum) A (Minimum) IV (Minimum)
Table 4. Moisture Sensitivity Level
Test Methodology Per JESD22-A113, IPC/JEDEC J-STD-020 Rating 3 Package Peak Temperature 260 Unit C
Table 5. Electrical Characteristics (TA = 25C unless otherwise noted)
Characteristic Off Characteristics Zero Gate Voltage Drain Leakage Current (VDS = 70 Vdc, VGS = 0 Vdc) Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) Gate-Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) On Characteristics Gate Threshold Voltage (VDS = 10 Vdc, ID = 355 Adc) Gate Quiescent Voltage (VDD = 28 Vdc, ID = 1200 mAdc, Measured in Functional Test) Drain-Source On-Voltage (VGS = 10 Vdc, ID = 2.9 Adc) VGS(th) VGS(Q) VDS(on) 1.5 2.3 0.1 2.3 3.1 0.22 3 3.8 0.3 Vdc Vdc Vdc IDSS IDSS IGSS -- -- -- -- -- -- 10 1 1 Adc Adc Adc Symbol Min Typ Max Unit
Functional Tests (1) (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1200 mA, Pout = 50 W Avg., f = 748 MHz, Single-Carrier W-CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ 5 MHz Offset. Power Gain Drain Efficiency Output Peak-to-Average Ratio @ 0.01% Probability on CCDF Adjacent Channel Power Ratio Input Return Loss Gps D PAR ACPR IRL 18.0 34.0 5.7 -- -- 19.5 37.0 6.1 -37.5 -24 21.0 -- -- -35.0 -9 dB % dB dBc dB
Typical Broadband Performance (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1200 mA, Pout = 50 W Avg., Single-Carrier W-CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ 5 MHz Offset. Frequency 728 MHz 748 MHz 768 MHz 1. Part internally matched both on input and output. (continued) Gps (dB) 19.7 19.5 19.4 hD (%) 37.1 37.0 37.9 Output PAR (dB) 6.2 6.1 6.1 ACPR (dBc) -38.7 -37.5 -37.8 IRL (dB) -13 -24 -16
MRF8S7170NR3 2 RF Device Data Freescale Semiconductor
Table 5. Electrical Characteristics (TA = 25C unless otherwise noted) (continued)
Characteristic Symbol Min Typ Max Unit Typical Performances (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1200 mA, 728-768 MHz Bandwidth Pout @ 1 dB Compression Point, CW IMD Symmetry @ 160 W PEP, Pout where IMD Third Order Intermodulation 30 dBc (Delta IMD Third Order Intermodulation between Upper and Lower Sidebands > 2 dB) VBW Resonance Point (IMD Third Order Intermodulation Inflection Point) Gain Flatness in 40 MHz Bandwidth @ Pout = 50 W Avg. Gain Variation over Temperature (-30 C to +85C) Output Power Variation over Temperature (-30 C to +85C) P1dB IMDsym -- 16 -- -- 182 -- W MHz
VBWres GF G P1dB
-- -- -- --
65 0.5 0.017 0.0048
-- -- -- --
MHz dB dB/C dBm/C
MRF8S7170NR3 RF Device Data Freescale Semiconductor 3
B1
C6 C7 C22 C23 R1 C5 C24 C25
C26
C4
R2
C9 C12 C13 CUT OUT AREA C15
C1 C2
C10 C11 C20 C14 C8
C3
C16 C17
C18 C19
MRF8S7170N Rev. 0
C21
Figure 1. MRF8S7170NR3 Test Circuit Component Layout
Table 6. MRF8S7170NR3 Test Circuit Component Designations and Values
Part B1 C1 C2 C3, C4 C5 C6 C7 C8, C9 C10, C12 C11, C13 C14 C15, C16, C17, C22, C23 C18, C19, C24, C25 C20 C21, C26 R1 R2 PCB Description Ferrite Bead, Short 2.7 pF Chip Capacitor 2.2 pF Chip Capacitor 9.1 pF Chip Capacitors 47 F, 63 V Electrolytic Capacitor 6.8 F, 100 V Chip Capacitor 100 pF Chip Capacitor 11 pF Chip Capacitors 6.8 pF Chip Capacitors 7.5 pF Chip Capacitors 5.1 pF Chip Capacitor 39 pF Chip Capacitors 10 F, 25 V Chip Capacitors 0.8 pF Chip Capacitor 470 F, 63 V Electrolytic Capacitors 2K , 1/4 W Chip Resistor 4.3 , 1/4 W Chip Resistor 0.030, r = 3.5 Part Number 2743019447 ATC100B2R7BT500XT ATC100B2R2JT500XT ATC100B9R1CT500XT 476KXM063M C4532X7R1H685KT ATC100B101JT500XT ATC100B110JT500XT ATC100B6R8CT500XT ATC100B7R5CT500XT ATC100B5R1CT500XT ATC100B390JT500XT C5750X7R1E106KT ATC100B0R8BT500XT 477KXM063M CRCW12062K00FKEA CRCW12064R30FKEA RF-35 ATC ATC ATC Illinois Capacitor TDK ATC ATC ATC ATC ATC ATC TDK ATC Illinois Capacitor Vishay Vishay Taconic Manufacturer Fair-Rite
MRF8S7170NR3 4 RF Device Data Freescale Semiconductor
TYPICAL CHARACTERISTICS
D, DRAIN EFFICIENCY (%) 21 20.6 20.2 Gps, POWER GAIN (dB) 19.8 19.4 19 18.6 18.2 17.8 17.4 17 710 ACPR 720 730 740 750 760 770 780 IRL PARC 40 VDD = 28 Vdc, Pout = 50 W (Avg.), IDQ = 1200 mA 38 Single-Carrier W-CDMA 3.84 MHz Channel Bandwidth 36 D Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF 34 Gps 32 -35.5 ACPR (dBc) -36 -36.5 -37 -37.5 -38 790
IRL, INPUT RETURN LOSS (dB)
-7 -1 1 -15 -19 -23 -27
0 PARC (dB) -0.5 -1 -1.5 -2 -2.5
f, FREQUENCY (MHz)
Figure 2. Output Peak-to-Average Ratio Compression (PARC) Broadband Performance @ Pout = 50 Watts Avg.
-10 VDD = 28 Vdc, Pout = 160 W (PEP), IDQ = 1200 mA Two-Tone Measurements (f1 + f2)/2 = Center Frequency of 748 MHz IM3-U IM3-L -40 IM5-U IM5-L -50 IM7-U IM7-L
IMD, INTERMODULATION DISTORTION (dBc)
-20
-30
-60 1 10 TWO-T ONE SPACING (MHz) 100
Figure 3. Intermodulation Distortion Products versus Two-T one Spacing
20 19.5 Gps, POWER GAIN (dB) 19 18.5 18 17.5 17 OUTPUT COMPRESSION AT 0.01% PROBABILITY ON CCDF (dB) 1 0 -1 -2 -3 -4 -5 30 50 VDD = 28 Vdc, IDQ = 1200 mA PARC f = 748 MHz, Single-Carrier W-CDMA 3.84 MHz Channel Bandwidth, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF 70 90 110 ACPR D -3 dB = 96 W Gps -20 -25 -30 -35 -40 -45 -50 ACPR (dBc)
60 55 50 45 40 35
-1 dB = 42 W -2 dB = 60 W
30 130
Pout, OUTPUT POWER (WATTS)
Figure 4. Output Peak-to-Average Ratio Compression (PARC) versus Output Power
D, DRAIN EFFICIENCY (%)
MRF8S7170NR3 RF Device Data Freescale Semiconductor 5
TYPICAL CHARACTERISTICS
22 Gps 20 Gps, POWER GAIN (dB) 18 16 14 ACPR 12 10 1 10 Pout, OUTPUT POWER (WATTS) AVG. D 768 MHz 748 MHz 728 MHz 100 12 0 300 768 MHz VDD = 28 Vdc, IDQ = 1200 mA Single-Carrier W-CDMA 3.84 MHz Channel Bandwidth Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF 748 MHz 728 MHz 728 MHz 748 MHz 768 MHz 60 48 36 24 D, DRAIN EFFICIENCY (%) -10 -20 -30 -40 -50 -60 ACPR (dBc) +ACPR in 3.84 MHz Integrated BW 1.8 3.6 72 0
Figure 5. Single-Carrier W-CDMA Power Gain, Drain Efficiency and ACPR versus Output Power
22 20 18 GAIN (dB) 16 14 12 10 600 VDD = 28 Vdc Pin = 0 dBm IDQ = 1200 mA 650 700 750 IRL -25 -30 1000 Gain 0 -5 -10 -15 -20 IRL (dB) 3.84 MHz Channel BW -1.8 0
800
850
900
950
f, FREQUENCY (MHz)
Figure 6. Broadband Frequency Response
W-CDMA TEST SIGNAL
100 10 PROBABILITY (%) 1 Input Signal 0.1 (dB) 0.01 0.001 0.0001 0 W-CDMA. ACPR Measured in 3.84 MHz Channel Bandwidth @ 5 MHz Offset. Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF 1 2 3 4 5 6 7 8 9 10 10 0 -10 -20 -30 -40 -50 -60 -70 -80 -90 -100 -9 -7.2 -5.4 -3.6 5.4 7.2 9 f, FREQUENCY (MHz) -ACPR in 3.84 MHz Integrated BW
PEAK-T O-A VERAGE (dB)
Figure 7. CCDF W-CDMA IQ Magnitude Clipping, Single-Carrier Test Signal MRF8S7170NR3 6
Figure 8. Single-Carrier W-CDMA Spectrum RF Device Data Freescale Semiconductor
VDD = 28 Vdc, IDQ = 1200 mA, Pout = 50 W Avg. f MHz 710 720 730 740 750 760 770 780 790 Zsource W 0.876 - j2.237 0.910 - j2.150 0.942 - j2.080 0.970 - j2.032 0.981 - j2.013 0.961 - j2.009 0.911 - j1.996 0.843 - j1.955 0.787 - j1.881 Zload W 1.685 - j0.887 1.659 - j0.776 1.650 - j0.683 1.660 - j0.610 1.677 - j0.563 1.688 - j0.550 1.687 - j0.551 1.660 - j0.557 1.620 + j0.548
Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground.
Input Matching Network
Device Under Test
Output Matching Network
Z
source
Z
load
Figure 9. Series Equivalent Source and Load Impedance
MRF8S7170NR3 RF Device Data Freescale Semiconductor 7
ALTERNATIVE PEAK TUNE LOAD PULL CHARACTERISTICS
VDD = 28 Vdc, IDQ = 1200 mA, Pulsed CW, 10 sec(on), 10% Duty Cycle 60 59 Pout, OUTPUT POWER (dBm) 58 57 56 55 54 53 52 51 50 49 31 32 33 34 35 36 37 38 39 40 41 42 Pin, INPUT POWER (dBm) NOTE: Load Pull Test Fixture Tuned for Peak P1dB Output Power @ 28 V P1dB Watts 229 227 214 dBm 53.6 53.5 53.3 P3dB Watts 310 303 293 dBm 54.9 54.8 54.6 728 MHz 748 MHz 768 MHz Actual 748 MHz 768 MHz 728 MHz Ideal
f (MHz) 728 748 768
Test Impedances per Compression Level f (MHz) 728 748 768 P1dB P1dB P1dB Zsource 0.61 - j2.32 0.73 - j2.60 0.72 - j2.82 Zload 0.72 - j1.32 0.81 - j1.27 0.58 - j1.46
Figure 10. Pulsed CW Output Power versus Input Power @ 28 V
MRF8S7170NR3 8 RF Device Data Freescale Semiconductor
PACKAGE DIMENSIONS
MRF8S7170NR3 RF Device Data Freescale Semiconductor 9
MRF8S7170NR3 10 RF Device Data Freescale Semiconductor
MRF8S7170NR3 RF Device Data Freescale Semiconductor 11
PRODUCT DOCUMENTATION, TOOLS AND SOFTWARE
Refer to the following documents, tools and software to aid your design process. Application Notes * AN1907: Solder Reflow Attach Method for High Power RF Devices in Plastic Packages * AN1955: Thermal Measurement Methodology of RF Power Amplifiers * AN3789: Clamping of High Power RF Transistors and RFICs in Over-Molded Plastic Packages Engineering Bulletins * EB212: Using Data Sheet Impedances for RF LDMOS Devices Software * Electromigration MTTF Calculator * RF High Power Model * .s2p File For Software and Tools, do a Part Number search at http://www.freescale.com, and select the "Part Number" link. Go to the Software & Tools tab on the part's Product Summary page to download the respective tool.
REVISION HISTORY
The following table summarizes revisions to this document.
Revision 0 Date Feb. 2010 * Initial Release of Data Sheet Description
MRF8S7170NR3 12 RF Device Data Freescale Semiconductor
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MRF8S7170NR3
Document Number: RF Device Data MRF8S7170N Rev. 0, 2/2010 Freescale Semiconductor
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